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| SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 - NOVEMBER 1998 FEATURES FCX1151A C * * * * * 2W POWER DISSIPATION 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 66m at 3A FCX1051A 151 E C B Complimentary Type Partmarking Detail - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -45 -40 -5 -5 -3 -500 1 2 -55 to +150 UNIT V V V A A mA W W C recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX1151A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)CEO V(BR)CEV V(BR)EBO ICBO IEBO ICES VCE(sat) -45 -40 -40 -40 -5 -0.3 -0.3 -0.3 -60 -120 -140 -200 -985 -850 270 250 180 100 450 400 300 190 45 145 40 170 460 -100 -100 -100 -90 -180 -220 -300 -1050 -950 TYP. MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC=-100A IC=-100A IC=-10mA IC=-100A, VEB=+1V IE=-100A VCB=-36V VEB=-4V VCE=-32V IC=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-5mA* IC=-1A, IB=-20mA* IC=-3A, IB=-250mA* IC=-3A, IB=-250mA* IC=-3A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* IC=-5A, VCE=-2V* MHz pF ns ns IC=-50mA, VCE=-10V f=50MHz VCB=-10V, f=1MHz IC=-2A, IB=-20mA, VCC=-30V IC=-2A, IB=20mA, VCC=-30V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 800 Transition Frequency Output Capacitance Switching Times fT Ccb ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FCX1151A TYPICAL CHARACTERISTICS 0.4 +25C 0.4 IC/IB=100 0.3 IC/IB=50 IC/IB=100 IC/IB=200 0.3 -55C +25C +100C +150C 0.2 0.2 0.1 0.1 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 800 VCE=2V 1.0 IC/IB=100 0.8 600 +100C 0.6 400 +25C 0.4 200 -55C 0.2 0 -55C +25C +100C +150C 0 1m 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 0.9 10 0.6 1 DC 1s 100ms 10ms 1ms 1us 0.3 -55C +25C +100C +150C 0.1 0 1m 10m 100m 1 10 0.01 100m 0.1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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